Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9366306 | Double-rod type shock absorber | Eiko Miyasato, Youji Takakuwa, Kouichi Matsuzaki, Toshio Minakuchi, Kodai Yoshinaga +2 more | 2016-06-14 |
| 8857583 | Hydraulic shock absorber | Eiko Miyasato, Junya Kaneko, Youji Takakuwa, Kengo Monden, Masayuki Ishikawa +1 more | 2014-10-14 |
| 8757338 | Hydraulic shock absorber | Eiko Miyasato, Masayuki Ishikawa, Tsuyoshi Mita, Youji Takakuwa, Kouichi Matsuzaki +3 more | 2014-06-24 |
| 7526993 | Fluid pressure cylinder apparatus having throttle valve | Tadashi Ishii | 2009-05-05 |
| 6355963 | MOS type semiconductor device having an impurity diffusion layer | Shinji Odanaka | 2002-03-12 |
| 6031268 | Complementary semiconductor device and method for producing the same | Shinji Odanaka | 2000-02-29 |
| 6031272 | MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region | Shinji Odanaka | 2000-02-29 |
| 5830788 | Method for forming complementary MOS device having asymmetric region in channel region | Shinji Odanaka | 1998-11-03 |
| 5808347 | MIS transistor with gate sidewall insulating layer | Kazumi Kurimoto, Shinji Odanaka | 1998-09-15 |
| 5675168 | Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device | Kyoji Yamashita, Shinji Odanaka, Kazumi Kurimoto, Isao Miyanaga, Atsushi Hori | 1997-10-07 |
| 5518944 | MOS transistor and its fabricating method | Shinji Odanaka, Kazumi Kurimoto | 1996-05-21 |
| 5512771 | MOS type semiconductor device having a low concentration impurity diffusion region | Kazumi Kurimoto, Shinji Odanaka | 1996-04-30 |
| 5386133 | LDD FET with polysilicon sidewalls | Shinji Odanaka, Kazumi Kurimoto | 1995-01-31 |
| 5221632 | Method of proudcing a MIS transistor | Kazumi Kurimoto, Shinji Odanaka | 1993-06-22 |