Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Vincenzo Enea — 12 Patents

SSStmicroelectronics Sa: 9 patents #682 of 4,662Top 15%
NUNew York University: 2 patents #380 of 1,640Top 25%
SSSifi S.P.A.: 1 patents #9 of 17Top 55%
Overall (All Time): #396,045 of 4,157,543Top 10%
12 Patents All Time
Vincenzo Enea has been granted 12 US patents while listed as an inventor at Stmicroelectronics Sa. The first was granted in 1990 and the most recent in March 2025. Vincenzo Enea ranks #396,045 of 4,157,543 US inventors in our database (top 9.5%). Patent records list Vincenzo Enea in Tivoli, NY, IT.

Patents per Year

Patents granted per year, 1990 to 2025Bar chart with a peak of 3 patents in 2011.peak 31990: 1 patents19901997: 1 patents19972011: 3 patents20112013: 1 patents20132014: 1 patents20142019: 1 patents20192020: 1 patents20202021: 1 patents20212023: 1 patents20232025: 1 patents2025

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12243922 Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor 2025-03-04
11705493 Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor 2023-07-18 $35,894,000
11038032 Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor 2021-06-15 $21,266,000
10770558 Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor 2020-09-08 $12,164,000
10510849 Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor 2019-12-17 $33,776,000
8912164 Re-epithelializing pharmaceutical compositions comprising xanthan gum Maria Grazia Mazzone, Grazia Paladino, Clara Marino, Ornella Peri 2014-12-16
8420454 Three-terminal power device with high switching speed and manufacturing process Cesare Ronsisvalle 2013-04-16 $4,852,000
7982528 Three-terminal power device with high switching speed and manufacturing process Cesare Ronsisvalle 2011-07-19 $6,398,000
7936047 Method for realizing a contact of an integrated well in a semiconductor substrate, in particular for a base terminal of a bipolar transistor, with enhancement of the transistor performances Cesare Ronsisvalle 2011-05-03 $18,848,000
7868382 Emitter-switched power actuator with integrated Zener diode between source and base Cesare Ronsisvalle 2011-01-11 $4,998,000
5700906 Immunogenic peptide antigen corresponding to plasmodium vivax circumsporozoite protein David E. Arnot, Ruth S. Nussenzweig, Victor Nussenzweig 1997-12-23
4957869 Immunogenic peptide corresponding to P. vivax CS protein David E. Arnot, Ruth S. Nussenzweig, Victor Nussenzweig 1990-09-18