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Home › Method for realizing a contact of an integrated well in a semiconductor substrate, in particular for a base terminal of a bipolar transistor, with enhancement of the transistor performances

Method for realizing a contact of an integrated well in a semiconductor substrate, in particular for a base terminal of a bipolar transistor, with enhancement of the transistor performances

US Patent 7936047 · Granted May 3, 2011

Estimated economic value: $18,848,000 ⓘ

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