| 11621051 |
Electronic chip memory |
Stephane Denorme, Joel Damiens, Fabrice Marinet |
2023-04-04 |
$26,131,000 |
| 11355503 |
Electronic chip memory |
Stephane Denorme |
2022-06-07 |
$10,125,000 |
| 11250930 |
Electronic chip memory |
Stephane Denorme, Joel Damiens, Fabrice Marinet |
2022-02-15 |
$15,134,000 |
| 11164647 |
Electronic chip memory |
Stephane Denorme |
2021-11-02 |
$35,079,000 |
| 9881928 |
Method for producing one-time-programmable memory cells and corresponding integrated circuit |
Stephane Denorme |
2018-01-30 |
$14,089,000 |
| 9589968 |
Method for producing one-time-programmable memory cells and corresponding integrated circuit |
Stephane Denorme |
2017-03-07 |
$14,445,000 |
| 9564242 |
Method for controlling the breakdown of an antifuse memory cell |
Joel Damiens, Elise Le Roux |
2017-02-07 |
$7,742,000 |
| 9406372 |
Secure non-volatile memory |
Laurent Dedieu, Noureddine Larhriq |
2016-08-02 |
$3,849,000 |
| 9142318 |
Method for controlling the breakdown of an antifuse memory cell |
Joel Damiens, Elise Leroux |
2015-09-22 |
$5,056,000 |
| 8470645 |
Method for manufacturing an antifuse memory cell |
Elise Le Roux |
2013-06-25 |
$3,391,000 |
| 8432726 |
Secure non-volatile memory |
Laurent Dedieu, Noureddine Larhriq |
2013-04-30 |
$4,502,000 |
| 7675106 |
Non-volatile reprogrammable memory |
Rachid Bouchakour, Virginie Bidal, Richard Fournel, Philippe Gendrier, Romain Laffont +3 more |
2010-03-09 |
$4,733,000 |
| 7567464 |
Non-volatile memory device with periodic refresh and method of programming such a device |
Philippe Gendrier, Jean Tessier |
2009-07-28 |
$8,146,000 |
| 7504683 |
Integrated electronic circuit incorporating a capacitor |
Thierry Devoivre, Emmanuel Josse, Sebastien Lefebvre |
2009-03-17 |
$2,725,000 |
| 7502985 |
Method of detecting and correcting errors for a memory and corresponding integrated circuit |
Philippe Gendrier, Richard Fournel |
2009-03-10 |
$2,024,000 |
| 7333362 |
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane |
Philippe Gendrier, Cyrille Dray, Richard Fournel, Sébastien Poirier, Daniel Caspar |
2008-02-19 |
$3,401,000 |
| 7289355 |
Pre-written volatile memory cell |
Jean Lasseuguette, Richard Fournel |
2007-10-30 |
$3,992,000 |
| 7184299 |
Nonvolatile SRAM memory cell |
Richard Fournel, Emmanuel Vincent, Sylvie Bruyere, Francois Jacquet |
2007-02-27 |
$5,683,000 |
| 6977840 |
Storage element with a defined number of write cycles |
Richard Fournel, Jean-Pierre Schoellkopf |
2005-12-20 |
$21,345,000 |
| 6421293 |
One-time programmable memory cell in CMOS technology |
Jean-Pierre Schoellkopf |
2002-07-16 |
$15,489,000 |
| 6351407 |
Differential one-time programmable memory cell structure in CMOS technology |
— |
2002-02-26 |
$19,973,000 |