Issued Patents All Time
Showing 1–25 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10014399 | Hetero-junction bipolar transistor and electric device | — | 2018-07-03 |
| 9991335 | Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same | Shoko ECHIGOYA, Fumihiko Nakamura, Shuichi Yagi, Souta MATSUMOTO | 2018-06-05 |
| 8785976 | Polarization super-junction low-loss gallium nitride semiconductor device | Akira Nakajima, Sankara Narayanan Ekkanath Madathil, Yasunobu Sumida | 2014-07-22 |
| 6903392 | Semiconductor device and its manufacturing method | — | 2005-06-07 |
| RE38613 | Method for growing a nitride compound semiconductor | Tsunenori Asatsuma, Fumihiko Nakamura | 2004-10-05 |
| 6750481 | Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same | — | 2004-06-15 |
| 6501154 | Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure | Etsuo Morita, Masao Ikeda | 2002-12-31 |
| 6468902 | Semiconductor device and its manufacturing method | — | 2002-10-22 |
| 6426264 | Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device | — | 2002-07-30 |
| 6413312 | Method for growing a nitride compound semiconductor | Tsunenori Asatsuma, Fumihiko Nakamura | 2002-07-02 |
| 6362016 | Semiconductor light emitting device | Kenji Funato, Tsunenori Asatsuma | 2002-03-26 |
| 6281032 | Manufacturing method for nitride III-V compound semiconductor device using bonding | Osamu Matsuda, Toshimasa Kobayashi, Norikazu Nakayama | 2001-08-28 |
| 6239033 | Manufacturing method of semiconductor device | — | 2001-05-29 |
| 6235617 | Semiconductor device and its manufacturing method | — | 2001-05-22 |
| 6140169 | Method for manufacturing field effect transistor | Shunji Imanaga | 2000-10-31 |
| 6121636 | Semiconductor light emitting device | Etsuo Morita | 2000-09-19 |
| 6111273 | Semiconductor device and its manufacturing method | — | 2000-08-29 |
| 6107162 | Method for manufacture of cleaved light emitting semiconductor device | Etsuo Morita | 2000-08-22 |
| 6081001 | Nitride semiconductor light emitting device | Kenji Funato, Tsunenori Asatsuma | 2000-06-27 |
| 6064082 | Heterojunction field effect transistor | Shunji Imanaga, Toshimasa Kobayashi | 2000-05-16 |
| 6043140 | Method for growing a nitride compound semiconductor | Tsunenori Asatsuma, Fumihiko Nakamura | 2000-03-28 |
| 5981980 | Semiconductor laminating structure | Takao Miyajima, Yann Le Bellego | 1999-11-09 |
| 5929467 | Field effect transistor with nitride compound | Shunji Imanaga | 1999-07-27 |
| 5863811 | Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers | Tsunenori Asatsuma, Kenji Funato | 1999-01-26 |
| 5821568 | Cleaved semiconductor device with {11-20} plane | Etsuo Morita | 1998-10-13 |