EM

Etsuo Morita

SO Sony: 21 patents #1,931 of 25,231Top 8%
MM Mitsubishi Materials: 1 patents #812 of 1,543Top 55%
MS Mitsubishi Materials Silicon: 1 patents #58 of 116Top 50%
Overall (All Time): #224,440 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8741451 Crystal film, crystal substrate, and semiconductor device Yousuke Murakami, Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata 2014-06-03
7727331 Crystal firm, crystal substrate, and semiconductor device Yousuke Murakami, Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata 2010-06-01
7364805 Crystal film, crystal substrate, and semiconductor device Yousuke Murakami, Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata 2008-04-29
7294201 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device 2007-11-13
7244308 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device 2007-07-17
7125736 Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate 2006-10-24
7033854 Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate 2006-04-25
6967353 Semiconductor light emitting device and fabrication method thereof Jun Suzuki, Hiroyuki Okuyama, Goshi Biwa 2005-11-22
6727523 METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE 2004-04-27
6501154 Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure Masao Ikeda, Hiroji Kawai 2002-12-31
6498048 METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE 2002-12-24
6232623 Semiconductor device on a sapphire substrate 2001-05-15
6121636 Semiconductor light emitting device Hiroji Kawai 2000-09-19
6107162 Method for manufacture of cleaved light emitting semiconductor device Hiroji Kawai 2000-08-22
5828086 Semiconductor light emitting device with a Mg superlattice structure Akira Ishibashi, Satoshi Matsumoto, Masaharu Nagai, Satoshi Ito, Shigetaka Tomiya +1 more 1998-10-27
5821568 Cleaved semiconductor device with {11-20} plane Hiroji Kawai 1998-10-13
5753966 Semiconductor device with cleaved surface Hiroji Kawai 1998-05-19
5705421 A SOI substrate fabricating method Takeshi Matsushita, Tsuneo Nakajima, Hiroyuki Hasegawa, Takayuki Shingyouji 1998-01-06
5665977 Semiconductor light emitting device with defect decomposing and blocking layers Akira Ishibashi, Satoshi Matsumoto, Masaharu Nagai, Satoshi Ito, Shigetaka Tomiya +1 more 1997-09-09
5418374 Semiconductor device having an active layer with regions with different bandgaps Shigetaka Tomiya, Tadashi Yamamoto, Akira Ishibashi 1995-05-23