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2014-06-03 |
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Crystal firm, crystal substrate, and semiconductor device |
Yousuke Murakami, Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata |
2010-06-01 |
| 7364805 |
Crystal film, crystal substrate, and semiconductor device |
Yousuke Murakami, Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata |
2008-04-29 |
| 7294201 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device |
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2007-11-13 |
| 7244308 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device |
— |
2007-07-17 |
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Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate |
— |
2006-10-24 |
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Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate |
— |
2006-04-25 |
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Semiconductor light emitting device and fabrication method thereof |
Jun Suzuki, Hiroyuki Okuyama, Goshi Biwa |
2005-11-22 |
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METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE |
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2004-04-27 |
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Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure |
Masao Ikeda, Hiroji Kawai |
2002-12-31 |
| 6498048 |
METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE |
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2002-12-24 |
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Semiconductor device on a sapphire substrate |
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2001-05-15 |
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Semiconductor light emitting device |
Hiroji Kawai |
2000-09-19 |
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Method for manufacture of cleaved light emitting semiconductor device |
Hiroji Kawai |
2000-08-22 |
| 5828086 |
Semiconductor light emitting device with a Mg superlattice structure |
Akira Ishibashi, Satoshi Matsumoto, Masaharu Nagai, Satoshi Ito, Shigetaka Tomiya +1 more |
1998-10-27 |
| 5821568 |
Cleaved semiconductor device with {11-20} plane |
Hiroji Kawai |
1998-10-13 |
| 5753966 |
Semiconductor device with cleaved surface |
Hiroji Kawai |
1998-05-19 |
| 5705421 |
A SOI substrate fabricating method |
Takeshi Matsushita, Tsuneo Nakajima, Hiroyuki Hasegawa, Takayuki Shingyouji |
1998-01-06 |
| 5665977 |
Semiconductor light emitting device with defect decomposing and blocking layers |
Akira Ishibashi, Satoshi Matsumoto, Masaharu Nagai, Satoshi Ito, Shigetaka Tomiya +1 more |
1997-09-09 |
| 5418374 |
Semiconductor device having an active layer with regions with different bandgaps |
Shigetaka Tomiya, Tadashi Yamamoto, Akira Ishibashi |
1995-05-23 |