| 6682991 |
Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device |
Tomonori Hino, Takeharu Asano, Tsunenori Asatsuma, Satoru Kijima, Shigetaka Tomiya |
2004-01-27 |
| 6576533 |
Method of forming semiconductor thin film of group III nitride compound semiconductor. |
Shigetaka Tomiya |
2003-06-10 |
| 6362016 |
Semiconductor light emitting device |
Tsunenori Asatsuma, Hiroji Kawai |
2002-03-26 |
| 6081001 |
Nitride semiconductor light emitting device |
Tsunenori Asatsuma, Hiroji Kawai |
2000-06-27 |
| 5863811 |
Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers |
Hiroji Kawai, Tsunenori Asatsuma |
1999-01-26 |
| 5497015 |
Quantum interference transistor |
Akira Ishibashi, Yoshifumi Mori |
1996-03-05 |
| 5294807 |
Quantum effect device in which conduction between a plurality of quantum dots or wires is achieved by tunnel transition |
Ryuichi Ugajin |
1994-03-15 |
| 5171718 |
Method for forming a fine pattern by using a patterned resist layer |
Akira Ishibashi, Yoshifumi Mori |
1992-12-15 |
| 5147823 |
Method for forming an ultrafine metal pattern using an electron beam |
Akira Ishibashi, Yoshifumi Mori |
1992-09-15 |
| 4888622 |
Superconductor electron device |
Akira Ishibashi, Yoshifumi Mori |
1989-12-19 |