Issued Patents All Time
Showing 51–75 of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6537901 | Method of manufacturing a transistor in a semiconductor device | Tae-Ho Cha, Tae-Kyun Kim, Dea-Gyu Park, In-Seok Yeo, Jin Won Park | 2003-03-25 |
| 6524918 | Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric | Dae-Gyu Park, Jeong-Youb Lee | 2003-02-25 |
| 6514827 | Method for fabricating a dual metal gate for a semiconductor device | Tae-Kyun Kim, Tae-Ho Cha, In-Seok Yeo | 2003-02-04 |
| 6506676 | Method of manufacturing semiconductor devices with titanium aluminum nitride work function | Dae-Gyu Park, Tae-Ho Cha, Heung-Jae Cho, Tae-Kyun Kim, Kwan-Yong Lim +2 more | 2003-01-14 |
| 6468914 | Method of forming gate electrode in semiconductor device | In-Seok Yeo | 2002-10-22 |
| 6451639 | Method for forming a gate in a semiconductor device | Tae-Kyun Kim, Jae Young Kim, In-Seok Yeo | 2002-09-17 |
| 6436775 | MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness | Tae-Kyun Kim, In-Seok Yeo | 2002-08-20 |
| 6420241 | Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process | Young Bog Kim, In-Seok Yeo, Jong Choul Kim | 2002-07-16 |
| 6417055 | Method for forming gate electrode for a semiconductor device | Tae-Kyun Kim, In-Seok Yeo | 2002-07-09 |
| 6387788 | Method for forming polycide gate electrode of metal oxide semiconductor field effect transistor | In-Seok Yeo | 2002-05-14 |
| 6303494 | Method of forming gate electrode in semiconductor device | In-Seok Yeo | 2001-10-16 |
| 6284635 | Method for forming titanium polycide gate | — | 2001-09-04 |
| 6268272 | Method of forming gate electrode with titanium polycide | — | 2001-07-31 |
| 6255206 | Method of forming gate electrode with titanium polycide structure | Tae-Kyun Kim, In-Seok Yeo, Sahng Kyoo Lee | 2001-07-03 |
| 6255173 | Method of forming gate electrode with titanium polycide structure | — | 2001-07-03 |
| 6248632 | Method of forming gate electrode with polycide structure in semiconductor device | Heung-Jae Cho | 2001-06-19 |
| 6153481 | Method for forming an isolation insulating film for internal elements of a semiconductor device | Byung Jin Cho, Chan Lim | 2000-11-28 |
| 6107144 | Method for forming field oxide of semiconductor device and the semiconductor device | Young Bog Kim, In-Seok Yeo, Jong Choul Kim | 2000-08-22 |
| 6027985 | Method for forming element isolating film of semiconductor device | Tae Sik Song, Young Bog Kim, Byung Jin Cho, Jong Choul Kim | 2000-02-22 |
| 6013561 | Method for forming field oxide film of semiconductor device | Byung Jin Cho, Jong Choul Kim | 2000-01-11 |
| 5985738 | Method for forming field oxide of semiconductor device using wet and dry oxidation | Young Bog Kim, Moon-Sig Joo, Byung Jin Cho, Jong Choul Kim | 1999-11-16 |
| 5972779 | Method for forming field oxide film of semiconductor device with silicon and nitrogen containing etching residue | — | 1999-10-26 |
| 5940719 | Method for forming element isolating film of semiconductor device | Tae Sik Song, Young Bog Kim, Byung Jin Cho, Jong Choul Kim | 1999-08-17 |
| 5856230 | Method for making field oxide of semiconductor device | — | 1999-01-05 |
| 5841294 | Method for measuring leakage current in junction region of semiconductor device | Tae Sik Song | 1998-11-24 |