Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12195878 | SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same | Erwin Schmitt, Arnd-Dietrich Weber, Ralph-Uwe Barz, Dominik Bannspach | 2025-01-14 |
| 12157955 | Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport | Erwin Schmitt | 2024-12-03 |
| 11781245 | Silicon carbide substrate and method of growing SiC single crystal boules | Bernhard Ecker, Ralf Müller, Matthias Stockmeier, Arnd-Dietrich Weber | 2023-10-10 |
| 11624124 | Silicon carbide substrate and method of growing SiC single crystal boules | Bernhard Ecker, Ralf Müller, Matthias Stockmeier, Arnd-Dietrich Weber | 2023-04-11 |
| 11560643 | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport | Erwin Schmitt | 2023-01-24 |
| 11515140 | Chamfered silicon carbide substrate and method of chamfering | Bernhard Ecker, Ralf Müller, Matthias Stockmeier, Arnd-Dietrich Weber | 2022-11-29 |
| 11479875 | System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport | Erwin Schmitt | 2022-10-25 |
| 11474283 | Super resolution for magneto-optical microscopy | Suzanne Gabriëlle Everdine te Velthuis, Axel Hoffmann | 2022-10-18 |
| 11261536 | Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density | Bernhard Ecker, Ralf Mueller, Matthias Stockmeier, Arnd-Dietrich Weber | 2022-03-01 |
| 11236438 | Silicon carbide substrate and method of growing SiC single crystal boules | Bernhard Ecker, Ralf Müller, Matthias Stockmeier, Arnd-Dietrich Weber | 2022-02-01 |
| 11041254 | Chamfered silicon carbide substrate and method of chamfering | Bernhard Ecker, Ralf Müller, Arnd-Dietrich Weber, Matthias Stockmeier | 2021-06-22 |
| 9732438 | Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate | Ralf Mueller, Matthias Stockmeier | 2017-08-15 |
| 9590046 | Monocrystalline SiC substrate with a non-homogeneous lattice plane course | Thomas Straubinger, Andreas Wohlfart | 2017-03-07 |
| 9376764 | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing | Thomas Straubinger, Andreas Wohlfart, Erwin Schmitt | 2016-06-28 |
| 8865324 | Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution | Thomas Straubinger, Andreas Wohlfart | 2014-10-21 |
| 8758510 | Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course | Thomas Straubinger, Andreas Wohlfart | 2014-06-24 |
| 8747982 | Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course | Thomas Straubinger, Andreas Wohlfart | 2014-06-10 |