TS

Thomas Straubinger

SG Sicrystal Gmbh: 6 patents #4 of 11Top 40%
📍 Möhrendorf, DE: #8 of 25 inventorsTop 35%
Overall (All Time): #843,290 of 4,157,543Top 25%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
9590046 Monocrystalline SiC substrate with a non-homogeneous lattice plane course Michael Vogel, Andreas Wohlfart 2017-03-07
9376764 Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing Michael Vogel, Andreas Wohlfart, Erwin Schmitt 2016-06-28
8865324 Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution Michael Vogel, Andreas Wohlfart 2014-10-21
8758510 Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course Michael Vogel, Andreas Wohlfart 2014-06-24
8747982 Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course Michael Vogel, Andreas Wohlfart 2014-06-10
8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate Ralph-Uwe Barz 2012-11-06