MS

Matthias Stockmeier

SG Sicrystal Gmbh: 7 patents #2 of 11Top 20%
Overall (All Time): #703,111 of 4,157,543Top 20%
7
Patents All Time

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
11781245 Silicon carbide substrate and method of growing SiC single crystal boules Michael Vogel, Bernhard Ecker, Ralf Müller, Arnd-Dietrich Weber 2023-10-10
11624124 Silicon carbide substrate and method of growing SiC single crystal boules Michael Vogel, Bernhard Ecker, Ralf Müller, Arnd-Dietrich Weber 2023-04-11
11515140 Chamfered silicon carbide substrate and method of chamfering Bernhard Ecker, Ralf Müller, Michael Vogel, Arnd-Dietrich Weber 2022-11-29
11261536 Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density Bernhard Ecker, Ralf Mueller, Michael Vogel, Arnd-Dietrich Weber 2022-03-01
11236438 Silicon carbide substrate and method of growing SiC single crystal boules Michael Vogel, Bernhard Ecker, Ralf Müller, Arnd-Dietrich Weber 2022-02-01
11041254 Chamfered silicon carbide substrate and method of chamfering Michael Vogel, Bernhard Ecker, Ralf Müller, Arnd-Dietrich Weber 2021-06-22
9732438 Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate Ralf Mueller, Michael Vogel 2017-08-15