Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11300593 | Semiconductor component, assembly and method for manufacturing semiconductor component | Kenichi Suzuki, Kazuyuki Sashida, Mizue Yamaji, Kenichi Yoshida | 2022-04-12 |
| 11280812 | Semiconductor device and semiconductor component | Kazuyuki Sashida, Mizue Yamaji, Kenichi Suzuki, Kenichi Yoshida | 2022-03-22 |
| 11268988 | Detection substrate, assembly, and method for manufacturing detection substrate | Kazuyuki Sashida, Kenichi Suzuki, Mizue Yamaji, Kenichi Yoshida | 2022-03-08 |
| 7855413 | Diode with low resistance and high breakdown voltage | Mizue Kitada, Kosuke Oshima, Toru Kurosaki, Akihiko Sugai | 2010-12-21 |
| 7573109 | Semiconductor device | Hiroaki Shishido, Masato Mikawa, Kosuke Ohshima, Masahiro Kuriyama, Mizue Kitada | 2009-08-11 |
| 7365391 | Semiconductor device and method for manufacturing thereof | Toru Kurosaki, Mizue Kitada, Kosuke Ohshima, Hiroaki Shishido, Masato Mikawa | 2008-04-29 |
| 7282764 | Semiconductor device | Hiroaki Shishido, Masato Mikawa, Kosuke Ohshima, Masahiro Kuriyama, Mizue Kitada | 2007-10-16 |
| 7230298 | Transistor having narrow trench filled with epitaxially-grown filling material free of voids | Mizue Kitada, Kosuke Oshima, Toru Kurosaki, Akihiko Sugai | 2007-06-12 |
| 7208375 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Mizue Kitada, Kosuke Ohshima | 2007-04-24 |
| 7196376 | Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage | Toru Kurosaki, Mizue Kitada, Kosuke Ohshima, Hiroaki Shishido | 2007-03-27 |
| 7135718 | Diode device and transistor device | Mizue Kitada, Kosuke Ohsima, Toru Kurosaki | 2006-11-14 |
| 6906355 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Mizue Kitada, Kosuke Ohshima | 2005-06-14 |
| 6876034 | Semiconductor device having active grooves | Toru Kurosaki, Hiroaki Shishido, Mizue Kitada, Kosuke Ohshima | 2005-04-05 |
| 6841825 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Mizue Kitada, Kosuke Ohshima | 2005-01-11 |
| 6768138 | Diode element | Mizue Kitada, Kosuke Ohsima | 2004-07-27 |
| 6706615 | Method of manufacturing a transistor | Mizue Kitada, Toshiyuki Takemori | 2004-03-16 |
| 6573559 | Transistor and method of manufacturing the same | Mizue Kitada, Toshiyuki Takemori | 2003-06-03 |
| 6459128 | Field-effect transistor | Kousuke Ohshima | 2002-10-01 |
| 6404032 | Semiconductor device | Mizue Kitada | 2002-06-11 |
| 5345100 | Semiconductor rectifier having high breakdown voltage and high speed operation | Takashi Kan, Masaru Wakatabe, Mitsugu Tanaka, Akira Sugiyama | 1994-09-06 |
| 5262669 | Semiconductor rectifier having high breakdown voltage and high speed operation | Masaru Wakatabe, Mitsugu Tanaka | 1993-11-16 |