Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11843048 | Method of manufacturing MOSFET having a semiconductor base substrate with a super junction structure | Daisuke Arai, Takeshi Asada, Noriaki Suzuki, Koichi Murakami | 2023-12-12 |
| 11626479 | Semiconductor device and method of manufacturing semiconductor device | Gotaro TAKEMOTO, Toshihiro Okuda | 2023-04-11 |
| 11342452 | MOSFET, having a semiconductor base substrate with a super junction structure, method of manufacturing the MOSFET, and power conversion circuit having the MOSFET | Daisuke Arai, Takeshi Asada, Noriaki Suzuki, Koichi Murakami | 2022-05-24 |
| 11005354 | Power conversion circuit | Daisuke Arai, Shigeru Hisada | 2021-05-11 |
| 10872952 | MOSFET and power conversion circuit | Daisuke Arai | 2020-12-22 |
| 10818496 | Semiconductor device having crystal defects and method of manufacturing the semiconductor device having crystal defects | Daisuke Arai, Takeshi Asada, Noriaki Suzuki, Koichi Murakami | 2020-10-27 |
| 10700191 | MOSFET and power conversion circuit | Daisuke Arai, Shigeru Hisada, Takeshi Asada | 2020-06-30 |
| 10475917 | MOSFET | Daisuke Arai, Shigeru Hisada, Takeshi Asada | 2019-11-12 |
| 10468518 | Power semiconductor device having a first and a second conductive-type columnar regions formed alternately with each other and method of manufacturing the power semiconductor device | Takeshi Asada, Takeshi Yamaguchi, Noriaki Suzuki, Daisuke Arai | 2019-11-05 |
| 10468480 | MOSFET and power conversion circuit | Daisuke Arai | 2019-11-05 |
| 10439056 | Power semiconductor device and method of manufacturing power semiconductor device | Daisuke Arai, Takeshi Asada, Takeshi Yamaguchi, Noriaki Suzuki | 2019-10-08 |
| 10411141 | Semiconductor device and method of manufacturing semiconductor device | Takeshi Asada, Takeshi Yamaguchi, Noriaki Suzuki, Daisuke Arai | 2019-09-10 |
| 10290734 | MOSFET and power conversion circuit | Daisuke Arai | 2019-05-14 |
| 9859414 | Semiconductor device | Takeshi Asada, Takeshi Yamaguchi, Noriaki Suzuki | 2018-01-02 |
| 7855413 | Diode with low resistance and high breakdown voltage | Kosuke Oshima, Toru Kurosaki, Shinji Kunori, Akihiko Sugai | 2010-12-21 |
| 7573109 | Semiconductor device | Shinji Kunori, Hiroaki Shishido, Masato Mikawa, Kosuke Ohshima, Masahiro Kuriyama | 2009-08-11 |
| 7365391 | Semiconductor device and method for manufacturing thereof | Toru Kurosaki, Shinji Kunori, Kosuke Ohshima, Hiroaki Shishido, Masato Mikawa | 2008-04-29 |
| 7282764 | Semiconductor device | Shinji Kunori, Hiroaki Shishido, Masato Mikawa, Kosuke Ohshima, Masahiro Kuriyama | 2007-10-16 |
| 7230298 | Transistor having narrow trench filled with epitaxially-grown filling material free of voids | Kosuke Oshima, Toru Kurosaki, Shinji Kunori, Akihiko Sugai | 2007-06-12 |
| 7208375 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Shinji Kunori, Kosuke Ohshima | 2007-04-24 |
| 7196376 | Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage | Toru Kurosaki, Shinji Kunori, Kosuke Ohshima, Hiroaki Shishido | 2007-03-27 |
| 7135718 | Diode device and transistor device | Kosuke Ohsima, Shinji Kunori, Toru Kurosaki | 2006-11-14 |
| 6906355 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Shinji Kunori, Kosuke Ohshima | 2005-06-14 |
| 6876034 | Semiconductor device having active grooves | Toru Kurosaki, Hiroaki Shishido, Shinji Kunori, Kosuke Ohshima | 2005-04-05 |
| 6841825 | Semiconductor device | Toru Kurosaki, Hiroaki Shishido, Shinji Kunori, Kosuke Ohshima | 2005-01-11 |