Issued Patents All Time
Showing 51–75 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7008801 | Method of forming ferroelectric thin films on a high-k layer | Sheng Teng Hsu | 2006-03-07 |
| 6995025 | Asymmetrical programming ferroelectric memory transistor | Sheng Teng Hsu | 2006-02-07 |
| 6991942 | MFIS ferroelectric memory array on SOI and method of making same | Sheng Teng Hsu, Fengyan Zhang | 2006-01-31 |
| 6972239 | Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films | Wei-Wei Zhuang, Lawrence J. Charneski, David R. Evans, Sheng Teng Hsu | 2005-12-06 |
| 6951825 | Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask | Bruce D. Ulrich, David R. Evans, Sheng Teng Hsu | 2005-10-04 |
| 6939724 | Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer | Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu, Wei Pan | 2005-09-06 |
| 6927074 | Asymmetric memory cell | Sheng Teng Hsu, David R. Evans | 2005-08-09 |
| 6887799 | Indium oxide conductive film | Sheng Teng Hsu | 2005-05-03 |
| 6849891 | RRAM memory cell electrodes | Sheng Teng Hsu, Wei Pan, Fengyan Zhang, Wei-Wei Zhuang | 2005-02-01 |
| 6849467 | MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer | Wei Pan, Robert Barrowcliff, David R. Evans, Sheng Teng Hsu | 2005-02-01 |
| 6833572 | Electrode materials with improved hydrogen degradation resistance | Fengyan Zhang, Hong Ying, Yoshi Ono, Sheng Teng Hsu | 2004-12-21 |
| 6825519 | Selectively deposited PGO thin film and method for forming same | Sheng Teng Hsu, Bruce D. Ulrich | 2004-11-30 |
| 6819583 | Ferroelectric resistor non-volatile memory array | Sheng Teng Hsu, Fengyan Zhang | 2004-11-16 |
| 6794198 | MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides | Sheng Teng Hsu, David R. Evans, Bruce D. Ulrich | 2004-09-21 |
| 6762063 | Method of fabricating non-volatile ferroelectric transistors | Sheng Teng Hsu, Fengyan Zhang | 2004-07-13 |
| 6759250 | Deposition method for lead germanate ferroelectric structure with multi-layered electrode | Fengyan Zhang, Sheng Teng Hsu | 2004-07-06 |
| 6737693 | Ferroelastic integrated circuit device | Fengyan Zhang, Yoshi Ono, Sheng Teng Hsu | 2004-05-18 |
| 6716645 | MFMOS capacitors with high dielectric constant materials | Sheng Teng Hsu, Hong Ying, Bruce D. Ulrich, Yanjun Ma | 2004-04-06 |
| 6703655 | Ferroelectric memory transistor | Sheng Teng Hsu, Fengyan Zhang | 2004-03-09 |
| 6673664 | Method of making a self-aligned ferroelectric memory transistor | Sheng Teng Hsu, Fengyan Zhang | 2004-01-06 |
| 6664116 | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides | Sheng Teng Hsu | 2003-12-16 |
| 6649957 | Thin film polycrystalline memory structure | Sheng Teng Hsu, Fengyan Zhang, Wei-Wei Zhuang | 2003-11-18 |
| 6616857 | C-axis oriented lead germanate film | Fengyan Zhang, Yoshi Ono, Sheng Teng Hsu | 2003-09-09 |
| 6590243 | Ferroelastic lead germanate thin film and deposition method | Fengyan Zhang, Yoshi Ono, Sheng Teng Hsu | 2003-07-08 |
| 6566148 | Method of making a ferroelectric memory transistor | Sheng Teng Hsu, Bruce D. Ulrich | 2003-05-20 |