Issued Patents All Time
Showing 26–50 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7329548 | Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor | Sheng Teng Hsu, Bruce D. Ulrich | 2008-02-12 |
| 7320897 | Electroluminescence device with nanotip diodes | Sheng Teng Hsu, Wei-Wei Zhuang | 2008-01-22 |
| 7303971 | MSM binary switch memory device | Sheng Teng Hsu | 2007-12-04 |
| 7297642 | Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications | Wei Gao, Robert Barrowcliff, Yoshi Ono, Sheng Teng Hsu | 2007-11-20 |
| 7297602 | Conductive metal oxide gate ferroelectric memory transistor | Sheng Teng Hsu | 2007-11-20 |
| 7271081 | Metal/ZnOx/metal current limiter | Sheng Teng Hsu, Wei-Wei Zhuang, David R. Evans | 2007-09-18 |
| 7259055 | Method of forming high-luminescence silicon electroluminescence device | Pooran Chandra Joshi, Wei Gao, Yoshi Ono, Sheng Teng Hsu | 2007-08-21 |
| 7256465 | Ultra-shallow metal oxide surface channel MOS transistor | Sheng Teng Hsu, Bruce D. Ulrich | 2007-08-14 |
| 7256426 | Rare earth element-doped silicon/silicon dioxide lattice structure | Wei Gao, Yoshi Ono, Sheng Teng Hsu | 2007-08-14 |
| 7256429 | Memory cell with buffered-layer | Sheng Teng Hsu, Fengyan Zhang, Wei Pan, Wei-Wei Zhuang, David R. Evans +1 more | 2007-08-14 |
| 7235407 | System and method for forming a bipolar switching PCMO film | Lawrence J. Charneski, Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu | 2007-06-26 |
| 7226504 | Method to form thick relaxed SiGe layer with trench structure | Jer-Shen Maa, Douglas J. Tweet, Jong-Jan Lee, Sheng Teng Hsu | 2007-06-05 |
| 7214583 | Memory cell with an asymmetric crystalline structure | Sheng Teng Hsu, David R. Evans, Wei-Wei Zhuang, Wei Pan | 2007-05-08 |
| 7193280 | Indium oxide conductive film structures | Sheng Teng Hsu | 2007-03-20 |
| 7166485 | Superlattice nanocrystal Si-SiO2 electroluminescence device | Sheng Teng Hsu, Wei-Wei Zhuang | 2007-01-23 |
| 7157287 | Method of substrate surface treatment for RRAM thin film deposition | Wei-Wei Zhuang, Wei Pan, David R. Evans, Sheng Teng Hsu | 2007-01-02 |
| 7157111 | MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides | Sheng Teng Hsu, Bruce D. Ulrich | 2007-01-02 |
| 7153708 | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides | Sheng Teng Hsu | 2006-12-26 |
| 7112837 | MFIS ferroelectric memory array | Sheng Teng Hsu, Fengyan Zhang | 2006-09-26 |
| 7098496 | Ferroelectric transistor gate stack with resistance-modified conductive oxide | Sheng Teng Hsu | 2006-08-29 |
| 7098101 | Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor deposition | Lawrence J. Charneski, Sheng Teng Hsu | 2006-08-29 |
| 7060586 | PCMO thin film with resistance random access memory (RRAM) characteristics | Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu | 2006-06-13 |
| 7053001 | Selective etching processes for In2O3 thin films in FeRAM device applications | Sheng Teng Hsu, Bruce D. Ulrich | 2006-05-30 |
| 7029924 | Buffered-layer memory cell | Sheng Teng Hsu, Fengyan Zhang, Wei Pan, Wei-Wei Zhuang, David R. Evans +1 more | 2006-04-18 |
| 7008833 | In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications | Sheng Teng Hsu | 2006-03-07 |