Issued Patents All Time
Showing 76–100 of 102 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6479304 | Iridium composite barrier structure and method for same | Fengyan Zhang, Sheng Teng Hsu | 2002-11-12 |
| 6468901 | Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same | Yoshi Ono, Fengyan Zhang | 2002-10-22 |
| 6462366 | Ferroelectric nonvolatile transistor | Sheng Teng Hsu, Fengyan Zhang, Tingkai Li | 2002-10-08 |
| 6441417 | Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same | Fengyan Zhang, Yanjun Ma, Wei-Wei Zhuang, Sheng Teng Hsu | 2002-08-27 |
| 6372034 | PGO solutions for the preparation of PGO thin films via spin coating | Wei-Wei Zhuang, Fengyan Zhang, Sheng Teng Hsu | 2002-04-16 |
| 6368960 | Double sidewall raised silicided source/drain CMOS transistor | Sheng Teng Hsu | 2002-04-09 |
| 6350699 | Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistry | Fengyan Zhang | 2002-02-26 |
| 6339245 | Nitride overhang structure for the silicidation of transistor electrodes with shallow junctions | Sheng Teng Hsu, Chien-Hsiung Peng | 2002-01-15 |
| 6303502 | MOCVD metal oxide for one transistor memory | Sheng Teng Hsu, David R. Evans, Tingkai Li, Wei-Wei Zhuang | 2001-10-16 |
| 6288420 | Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier | Fengyan Zhang, Sheng Teng Hsu, Wei-Wei Zhuang | 2001-09-11 |
| 6236113 | Iridium composite barrier structure and method for same | Fengyan Zhang, Sheng Teng Hsu | 2001-05-22 |
| 6218249 | MOS transistor having shallow source/drain junctions and low leakage current | Sheng Teng Hsu, Chien-Hsiung Peng | 2001-04-17 |
| 6190963 | Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same | Fengyan Zhang, Sheng Teng Hsu, Wei-Wei Zhuang | 2001-02-20 |
| 6071782 | Partial silicidation method to form shallow source/drain junctions | Sheng Teng Hsu, Chien-Hsiung Peng | 2000-06-06 |
| 6048740 | Ferroelectric nonvolatile transistor and method of making same | Sheng Teng Hsu, Fengyang Zhang, Tingkai Li | 2000-04-11 |
| 6043164 | Method for transferring a multi-level photoresist pattern | Tue Nguyen, Sheng Teng Hsu, Bruce D. Ulrich, Chien-Hsiung Peng | 2000-03-28 |
| 5989965 | Nitride overhang structures for the silicidation of transistor electrodes with shallow junction | Sheng Teng Hsu, Chien-Hsiung Peng | 1999-11-23 |
| 5950078 | Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates | Masashi Maekawa | 1999-09-07 |
| 5918150 | Method for a chemical vapor deposition of copper on an ion prepared conductive surface | Tue Nguyen | 1999-06-29 |
| 5830775 | Raised silicided source/drain electrode formation with reduced substrate silicon consumption | Shen Teng Hsu | 1998-11-03 |
| 5814537 | Method of forming transistor electrodes from directionally deposited silicide | Sheng Teng Hsu | 1998-09-29 |
| 4990995 | Low reflectance conductor in an integrated circuit | — | 1991-02-05 |
| 4648939 | Formation of submicrometer lines | Sheng-Mou Huang | 1987-03-10 |
| 4585515 | Formation of conductive lines | — | 1986-04-29 |
| 4547261 | Anisotropic etching of aluminum | Bernard Halon | 1985-10-15 |