Issued Patents All Time
Showing 51–75 of 102 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6998661 | Integrated circuit structure including electrodes with PGO ferroelectric thin film thereon | Fengyan Zhang, Wei-Wei Zhuang, Sheng Teng Hsu | 2006-02-14 |
| 6992025 | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation | Jong-Jan Lee, Douglas J. Tweet, David R. Evans, Allen Burmaster, Sheng Teng Hsu | 2006-01-31 |
| 6967112 | Three-dimensional quantum dot structure for infrared photodetection | Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu | 2005-11-22 |
| 6903384 | System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications | Sheng Teng Hsu, Jong-Jan Lee, Douglas J. Tweet | 2005-06-07 |
| 6852652 | Method of making relaxed silicon-germanium on glass via layer transfer | Jong-Jan Lee, Douglas J. Tweet, Steve Droes | 2005-02-08 |
| 6793731 | Method for recrystallizing an amorphized silicon germanium film overlying silicon | Sheng Teng Hsu, Jong-Jan Lee, Douglas J. Tweet | 2004-09-21 |
| 6780700 | Method of fabricating deep sub-micron CMOS source/drain with MDD and selective CVD silicide | Katsuji Iguchi, Sheng Teng Hsu, Yoshi Ono | 2004-08-24 |
| 6780796 | Method of forming relaxed SiGe layer | Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu | 2004-08-24 |
| 6777327 | Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics | Wei Pan, David R. Evans, Sheng Teng Hsu | 2004-08-17 |
| 6767802 | Methods of making relaxed silicon-germanium on insulator via layer transfer | Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu | 2004-07-27 |
| 6746902 | Method to form relaxed sige layer with high ge content | Douglas J. Tweet, Sheng Teng Hsu | 2004-06-08 |
| 6720258 | Method of fabricating a nickel silicide on a substrate | Douglas J. Tweet, Yoshi Ono, Fengyan Zhang, Sheng Teng Hsu | 2004-04-13 |
| 6703293 | Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates | Douglas J. Tweet, Sheng Teng Hsu, Jong-Jan Lee | 2004-03-09 |
| 6699764 | Method for amorphization re-crystallization of Si1-xGex films on silicon substrates | Douglas J. Tweet, Jong-Jan Lee, Sheng Teng Hsu | 2004-03-02 |
| 6682995 | Iridium conductive electrode/barrier structure and method for same | Fengyan Zhang, Sheng Teng Hsu | 2004-01-27 |
| 6627919 | Thermally stable nickel germanosilicide formed on SiGe | Douglas J. Tweet, Sheng Teng Hsu | 2003-09-30 |
| 6585821 | Method of monitoring PGO spin-coating precursor solution synthesis using UV spectroscopy | Wei-Wei Zhuang, Fengyan Zhang, Sheng Teng Hsu | 2003-07-01 |
| 6586260 | Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same | Fengyan Zhang, Wei-Wei Zhuang, Sheng Teng Hsu | 2003-07-01 |
| 6583000 | Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation | Sheng Teng Hsu, Jong-Jan Lee, Douglas J. Tweet | 2003-06-24 |
| 6562703 | Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content | Douglas J. Tweet, Sheng Teng Hsu, Jong-Jan Lee | 2003-05-13 |
| 6555456 | Method of forming iridium conductive electrode/barrier structure | Fengyan Zhang, Sheng Teng Hsu | 2003-04-29 |
| 6541385 | Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning | Hong Ying, Fengyan Zhang, Sheng Teng Hsu | 2003-04-01 |
| 6537361 | Method of the synthesis and control of PGO spin-coating precursor solutions | Wei-Wei Zhuang, Fengyan Zhang, Sheng Teng Hsu | 2003-03-25 |
| 6534871 | Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same | Douglas J. Tweet, Yoshi Ono, Fengyan Zhang, Sheng Teng Hsu | 2003-03-18 |
| 6506637 | Method to form thermally stable nickel germanosilicide on SiGe | Douglas J. Tweet, Sheng Teng Hsu | 2003-01-14 |