CP

Chien-Hsiung Peng

Sharp Kabushiki Kaisha: 11 patents #1,520 of 10,731Top 15%
SA Sharp Laboratories Of America: 8 patents #118 of 419Top 30%
VP Virginia Tech Intellectual Properties: 4 patents #84 of 1,095Top 8%
CG Cera M Gmbh: 2 patents #4 of 18Top 25%
NV NVIDIA: 1 patents #4,316 of 7,811Top 60%
ST Sharp Microelectronics Technology: 1 patents #25 of 57Top 45%
CT Center For Innovative Technology: 1 patents #73 of 206Top 40%
📍 Blacksburg, VA: #64 of 1,029 inventorsTop 7%
🗺 Virginia: #1,597 of 34,511 inventorsTop 5%
Overall (All Time): #277,157 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
9207277 System and method for generating a yield forecast based on wafer acceptance tests Craig Nishizaki, Peter Hung, Gunaseelan Ponnuvel 2015-12-08
6339245 Nitride overhang structure for the silicidation of transistor electrodes with shallow junctions Jer-Shen Maa, Sheng Teng Hsu 2002-01-15
6242771 Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications Sheng Teng Hsu, Jong-Jan Lee 2001-06-05
6218249 MOS transistor having shallow source/drain junctions and low leakage current Jer-Shen Maa, Sheng Teng Hsu 2001-04-17
6071782 Partial silicidation method to form shallow source/drain junctions Jer-Shen Maa, Sheng Teng Hsu 2000-06-06
6043164 Method for transferring a multi-level photoresist pattern Tue Nguyen, Sheng Teng Hsu, Jer-Shen Maa, Bruce D. Ulrich 2000-03-28
6018171 Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same Sheng Teng Hsu, Jong-Jan Lee 2000-01-25
6011285 C-axis oriented thin film ferroelectric transistor memory cell and method of making the same Sheng Teng Hsu, Jong-Jan Lee 2000-01-04
5989965 Nitride overhang structures for the silicidation of transistor electrodes with shallow junction Jer-Shen Maa, Sheng Teng Hsu 1999-11-23
5821169 Hard mask method for transferring a multi-level photoresist pattern Tue Nguyen, Bruce D. Ulrich 1998-10-13
5717234 Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials Jie Si, Seshu B. Desu 1998-02-10
5629229 Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials Jie Si, Seshu B. Desu 1997-05-13
5625587 Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices Seshu B. Desu, Jie Si 1997-04-29
5593727 Production of films of SiO.sub.2 by chemical vapor deposition Seshu B. Desu, Tian Shi, Pradyot A. Agaskar 1997-01-14
5527567 Metalorganic chemical vapor deposition of layered structure oxides Seshu B. Desu, Wei Tao, Tingkai Li, Yongfei Zhu 1996-06-18
5431958 Metalorganic chemical vapor deposition of ferroelectric thin films Seshu B. Desu 1995-07-11
5262199 Coating porous materials with metal oxides and other ceramics by MOCVD Seshu B. Desu, Tian Shi 1993-11-16