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Heterostructure including a semiconductor layer with graded composition |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2025-05-13 |
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Optoelectronic device with reduced optical loss |
Joseph Dion, Devendra Diwan, Brandon A Robinson |
2024-09-24 |
| 11830963 |
Heterostructure including a semiconductor layer with graded composition |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2023-11-28 |
| 11784280 |
Optoelectronic device with reduced optical loss |
Joseph Dion, Devendra Diwan, Brandon A Robinson |
2023-10-10 |
| 11611011 |
Heterostructure including a semiconductor layer with graded composition |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2023-03-21 |
| 11508871 |
Heterostructure including a semiconductor layer with a varying composition |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2022-11-22 |
| RE48943 |
Group III nitride heterostructure for optoelectronic device |
Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska |
2022-02-22 |
| 10923623 |
Semiconductor layer including compositional inhomogeneities |
Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more |
2021-02-16 |
| 10903391 |
Optoelectronic device with modulation doping |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2021-01-26 |
| 10804423 |
Optoelectronic device with modulation doping |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2020-10-13 |
| 10629770 |
Semiconductor method having annealing of epitaxially grown layers to form semiconductor structure with low dislocation density |
Maxim S. Shatalov |
2020-04-21 |
| 10622515 |
Patterned layer design for group III nitride layer growth |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more |
2020-04-14 |
| 10615307 |
Semiconductor structure with inhomogeneous regions |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2020-04-07 |
| 10535793 |
Group III nitride heterostructure for optoelectronic device |
Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska |
2020-01-14 |
| 10490697 |
Epitaxy technique for growing semiconductor compounds |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +2 more |
2019-11-26 |
| 10460952 |
Stress relieving semiconductor layer |
Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska |
2019-10-29 |
| 10297460 |
Stress relieving semiconductor layer |
Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska |
2019-05-21 |
| 10243100 |
Semiconductor layer including compositional inhomogeneities |
Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more |
2019-03-26 |
| 10211048 |
Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more |
2019-02-19 |
| 10199531 |
Semiconductor heterostructure with stress management |
Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky +2 more |
2019-02-05 |
| 10199536 |
Patterned layer design for group III nitride layer growth |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more |
2019-02-05 |
| 10158044 |
Epitaxy technique for growing semiconductor compounds |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more |
2018-12-18 |
| 10153396 |
Patterned layer design for group III nitride layer growth |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more |
2018-12-11 |
| 10069034 |
Optoelectronic device with modulation doping |
Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska |
2018-09-04 |
| 10050175 |
Patterned layer design for group III nitride layer growth |
Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more |
2018-08-14 |