RJ

Rakesh Jain

ST Sensor Electronic Technology: 52 patents #7 of 47Top 15%
Overall (All Time): #50,254 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 25 most recent of 52 patents

Patent #TitleCo-InventorsDate
12300758 Heterostructure including a semiconductor layer with graded composition Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2025-05-13
12100779 Optoelectronic device with reduced optical loss Joseph Dion, Devendra Diwan, Brandon A Robinson 2024-09-24
11830963 Heterostructure including a semiconductor layer with graded composition Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2023-11-28
11784280 Optoelectronic device with reduced optical loss Joseph Dion, Devendra Diwan, Brandon A Robinson 2023-10-10
11611011 Heterostructure including a semiconductor layer with graded composition Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2023-03-21
11508871 Heterostructure including a semiconductor layer with a varying composition Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2022-11-22
RE48943 Group III nitride heterostructure for optoelectronic device Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska 2022-02-22
10923623 Semiconductor layer including compositional inhomogeneities Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more 2021-02-16
10903391 Optoelectronic device with modulation doping Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2021-01-26
10804423 Optoelectronic device with modulation doping Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2020-10-13
10629770 Semiconductor method having annealing of epitaxially grown layers to form semiconductor structure with low dislocation density Maxim S. Shatalov 2020-04-21
10622515 Patterned layer design for group III nitride layer growth Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more 2020-04-14
10615307 Semiconductor structure with inhomogeneous regions Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur 2020-04-07
10535793 Group III nitride heterostructure for optoelectronic device Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska 2020-01-14
10490697 Epitaxy technique for growing semiconductor compounds Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +2 more 2019-11-26
10460952 Stress relieving semiconductor layer Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska 2019-10-29
10297460 Stress relieving semiconductor layer Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska 2019-05-21
10243100 Semiconductor layer including compositional inhomogeneities Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more 2019-03-26
10211048 Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more 2019-02-19
10199531 Semiconductor heterostructure with stress management Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky +2 more 2019-02-05
10199536 Patterned layer design for group III nitride layer growth Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more 2019-02-05
10158044 Epitaxy technique for growing semiconductor compounds Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more 2018-12-18
10153396 Patterned layer design for group III nitride layer growth Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more 2018-12-11
10069034 Optoelectronic device with modulation doping Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska 2018-09-04
10050175 Patterned layer design for group III nitride layer growth Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more 2018-08-14