Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032956 | Patterned substrate design for layer growth | Maxim S. Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska | 2018-07-24 |
| 9923117 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Jinwei Yang, Michael Shur +1 more | 2018-03-20 |
| 9923118 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2018-03-20 |
| 9911895 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Jinwei Yang, Michael Shur +1 more | 2018-03-06 |
| 9831382 | Epitaxy technique for growing semiconductor compounds | Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more | 2017-11-28 |
| 9818826 | Heterostructure including a composite semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2017-11-14 |
| 9806228 | Patterned layer design for group III nitride layer growth | Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2017-10-31 |
| 9799793 | Semiconductor heterostructure with stress management | Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky +2 more | 2017-10-24 |
| 9748440 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more | 2017-08-29 |
| 9735315 | Semiconductor heterostructure with stress management | Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky +2 more | 2017-08-15 |
| 9691939 | Patterned layer design for group III nitride layer growth | Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2017-06-27 |
| 9680061 | Patterned layer design for group III nitride layer growth | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2017-06-13 |
| 9660133 | Group III nitride heterostructure for optoelectronic device | Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2017-05-23 |
| 9653313 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska | 2017-05-16 |
| 9653631 | Optoelectronic device with modulation doping | Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2017-05-16 |
| 9647168 | Optoelectronic device with modulation doping | Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2017-05-09 |
| 9634189 | Patterned substrate design for layer growth | Maxim S. Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska | 2017-04-25 |
| 9537054 | Semiconductor heterostructure with stress management | Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky +2 more | 2017-01-03 |
| 9502509 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska | 2016-11-22 |
| 9406840 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more | 2016-08-02 |
| 9397260 | Patterned layer design for group III nitride layer growth | Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2016-07-19 |
| 9331244 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Jinwei Yang, Michael Shur +1 more | 2016-05-03 |
| 9330906 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Michael Shur, Remigijus Gaska | 2016-05-03 |
| 9324560 | Patterned substrate design for layer growth | Maxim S. Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska | 2016-04-26 |
| 9281441 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska | 2016-03-08 |