Issued Patents All Time
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8785905 | Amber light-emitting diode comprising a group III-nitride nanowire active region | George T. Wang, Qiming Li, Jonathan J. Wierer, Jr. | 2014-07-22 |
| 8451877 | High efficiency III-nitride light-emitting diodes | Mary H. Crawford, Jaehee Cho, Di Zhu, Ahmed N. Noemaun, Martin F. Schubert +1 more | 2013-05-28 |
| 7915626 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films | Andrew A. Allerman, Mary H. Crawford, Stephen R. Lee | 2011-03-29 |
| 7470989 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices | Richard L. Henry, Martin C. Peckerar, Alma Wickenden, Charles R. Eddy, Jr., Ronald Holm +1 more | 2008-12-30 |
| 7198970 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices | Martin C. Peckerar, Richard L. Henry, Alma Wickenden, Charles R. Eddy, Jr., Ronald Holm +1 more | 2007-04-03 |
| 6265089 | Electronic devices grown on off-axis sapphire substrate | Mohammad Fatemi, Alma Wickenden, Richard L. Henry, Mark E. Twigg | 2001-07-24 |