Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12218255 | High voltage gallium nitride vertical PN diode | Luke Yates, Brendan Patrick Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael Lee Smith +7 more | 2025-02-04 |
| 11715635 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Morteza Monavarian, Daniel F. Feezell, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew M. Armstrong +1 more | 2023-08-01 |
| 11177126 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Morteza Monavarian, Daniel F. Feezell, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew M. Armstrong +1 more | 2021-11-16 |
| 10553697 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Andrew M. Armstrong, Albert G. Baca, Carlos Anthony Sanchez, Erica Ann Douglas, Robert Kaplar | 2020-02-04 |
| 10388753 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Andrew M. Armstrong, Albert G. Baca, Carlos Anthony Sanchez, Erica Ann Douglas, Robert Kaplar | 2019-08-20 |
| 9917149 | Diode and method of making the same | Jeramy R. Dickerson, Jonathan J. Wierer, Jr., Robert Kaplar | 2018-03-13 |
| 9595616 | Vertical III-nitride thin-film power diode | Jonathan J. Wierer, Jr., Arthur J. Fischer | 2017-03-14 |
| 9368677 | Selective layer disordering in III-nitrides with a capping layer | Jonathan J. Wierer, Jr. | 2016-06-14 |
| 9196788 | High extraction efficiency ultraviolet light-emitting diode | Jonathan J. Wierer, Jr., Ines Montano | 2015-11-24 |
| 9059356 | Laterally injected light-emitting diode and laser diode | Mary A. Miller, Mary H. Crawford | 2015-06-16 |
| 8895335 | Impurity-induced disorder in III-nitride materials and devices | Jonathan J. Wierer, Jr. | 2014-11-25 |
| 8349633 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films | Mary H. Crawford, Stephen R. Lee | 2013-01-08 |
| 7915626 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films | Mary H. Crawford, Daniel Koleske, Stephen R. Lee | 2011-03-29 |
| 6393038 | Frequency-doubled vertical-external-cavity surface-emitting laser | Thomas D. Raymond, William J. Alford, Mary H. Crawford | 2002-05-21 |
| 6365428 | Embedded high-contrast distributed grating structures | Walter J. Zubrzycki, Gregory A. Vawter | 2002-04-02 |
| 6252287 | InGaAsN/GaAs heterojunction for multi-junction solar cells | Steven R. Kurtz, John F. Klem, Eric Jones | 2001-06-26 |
| 6248992 | High gain photoconductive semiconductor switch having tailored doping profile zones | Albert G. Baca, Guillermo M. Loubriel, Alan Mar, Fred J. Zutavern, Harold P. Hjalmarson +7 more | 2001-06-19 |
| 6071109 | Method of making AlInSb by metal-organic chemical vapor deposition | Robert M. Biefeld, Kevin C. Baucom | 2000-06-06 |
| 5995529 | Infrared light sources with semimetal electron injection | Steven R. Kurtz, Robert M. Biefeld | 1999-11-30 |