Issued Patents All Time
Showing 26–50 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7791146 | Semiconductor device including field effect transistor and method of forming the same | Myung-Sun Kim, Tetsuji Ueno, Ho Lee, Ji-Hye Yi | 2010-09-07 |
| 7776723 | Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device | Ho-Jin Lee, Dongsuk Shin, Tetsuji Ueno, Seung Hwan Lee | 2010-08-17 |
| 7728393 | Semiconductor device | Tetsuji Ueno, Ho-Jin Lee | 2010-06-01 |
| 7723193 | Method of forming an at least penta-sided-channel type of FinFET transistor | Hyun Suk Kim, Ueno Tetsuji, Jae-Yoon Yoo, Seung Hwan Lee, Ho-Jin Lee +1 more | 2010-05-25 |
| 7714394 | CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same | Dong-Suk Shin, Tetsuji Ueno, Ho-Jin Lee, Seung Hwan Lee | 2010-05-11 |
| 7671420 | Semiconductor devices having faceted channels and methods of fabricating such devices | Dong-Suk Shin, Ueno Tetsuji, Seung Hwan Lee, Ho-Jin Lee | 2010-03-02 |
| 7642140 | CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same | Geum-Jong Bae, Tae-Hee Choe, Sang-Su Kim, Nae-In Lee, Kyung Wook Lee | 2010-01-05 |
| 7619285 | Method of fabricating CMOS transistor and CMOS transistor fabricated thereby | Dong-Suk Shin, Tetsuji Ueno, Ho-Jin Lee, Seung Hwan Lee | 2009-11-17 |
| 7611973 | Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same | Dong-Suk Shin, Tetsuji Ueno, Ho-Jin Lee, Seung Hwan Lee | 2009-11-03 |
| 7611951 | Method of fabricating MOS transistor having epitaxial region | Tetsuji Ueno, Ho-Jin Lee | 2009-11-03 |
| 7601983 | Transistor and method of manufacturing the same | Tetsuji Ueno, Ho-Jin Lee, Dong-Suk Shin, Seung Hwan Lee | 2009-10-13 |
| 7582535 | Method of forming MOS transistor having fully silicided metal gate electrode | Seung Hwan Lee, Dong-Suk Shin, Tetsuji Ueno, Ho-Jin Lee | 2009-09-01 |
| 7576395 | Dual gate stack CMOS structure with different dielectrics | Hyung-Suk Jung, Jong Ho Lee, Jae-Kwang Choi | 2009-08-18 |
| 7439596 | Transistors for semiconductor device and methods of fabricating the same | Jae-Yoon Yoo, Tetsuji Ueno, Ho Sang Lee, Seung Hwan Lee, Hyun Suk Kim +1 more | 2008-10-21 |
| 7385247 | At least penta-sided-channel type of FinFET transistor | Hyun Suk Kim, Ueno Tetsuji, Jae-Yoon Yoo, Seung Hwan Lee, Ho-Jin Lee +1 more | 2008-06-10 |
| 7368792 | MOS transistor with elevated source/drain structure | Seung Hwan Lee, Moon-han Park, Ho-Jin Lee, Jae-Yoon Yoo | 2008-05-06 |
| 7365010 | Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same | Hion-suck Baik, Dong-Suk Shin, Tetsuji Ueno, Seung Hwan Lee, Ho-Jin Lee | 2008-04-29 |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique | Dong-Suk Shin, Tetsuji Ueno, Ho-Jin Lee, Seung Hwan Lee | 2008-04-22 |
| 7354835 | Method of fabricating CMOS transistor and CMOS transistor fabricated thereby | Dong-Suk Shin, Ueno Tetsuji, Ho-Jin Lee, Seung Hwan Lee | 2008-04-08 |
| 7307274 | Transistors having reinforcement layer patterns and methods of forming the same | Ho-Jin Lee, Dong-Suk Shin, Ueno Tetsuji, Seung Hwan Lee | 2007-12-11 |
| 7250655 | MOS transistor having a T-shaped gate electrode | Geum-Jong Bae, Nae-In Lee, Sang-Su Kim, Jung II Lee | 2007-07-31 |
| 7195987 | Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein | Geum-Jong Bae, Tae-Hee Choe, Sang-Su Kim, Nae-In Lee, Kyung Wook Lee | 2007-03-27 |
| 7183172 | Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby | Jung-Il Lee, Geum-Jong Bae, Ki-Chul Kim, Sang-Su Kim | 2007-02-27 |
| 7101776 | Method of fabricating MOS transistor using total gate silicidation process | Jae-Yoon Yoo, Ho-Cheol Lee, Seung Hwan Lee | 2006-09-05 |
| 7084041 | Bipolar device and method of manufacturing the same including pre-treatment using germane gas | Jae-Yoon Yoo, Ho-Cheol Lee, Seung Hwan Lee, Byou-Ree Lim | 2006-08-01 |