Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8835956 | Display substrate and method of manufacturing the same | Zin-Taek Park, Hyeong-Chan Ko, Hyun-Sook Park, Sang Hoon Lee, Sung Hoon Kim | 2014-09-16 |
| 7867841 | Methods of forming semiconductor devices with extended active regions | Dong-Chan Lim, Soo-Ik Jang, In-Soo Jung | 2011-01-11 |
| 7329574 | Methods of forming capacitor electrodes using fluorine and oxygen | Sung-Il Cho, Jong Kyu Kim, Kyeong-Koo Chi, Cheol-Kyu Lee | 2008-02-12 |
| 7312130 | Methods of forming capacitor structures including L-shaped cavities | Dong Chan Kim, Chang-Jin Kang, Kyeong-Koo Ghi, Eun-Ae Chung, Sung-Il Cho | 2007-12-25 |
| 7247540 | Methods of forming field effect transistors having recessed channel regions | Sung Hoon Chung, Kyeong-Koo Chi | 2007-07-24 |
| 7226867 | Method of etching a metal layer using a mask, a metallization method for a semiconductor device, a method of etching a metal layer, and an etching gas | Seung-Young Son, Cheol-Kyu Lee, Chang-Jin Kang | 2007-06-05 |
| 7132708 | Semiconductor memory device having self-aligned contacts and method of fabricating the same | Tae-hyuk Ahn, Myeong-Cheol Kim, Jung-hyeon Lee, Gyung-jin Min | 2006-11-07 |
| 7125766 | Method of forming capacitor for semiconductor device | Dong Chan Kim, Chang-Jin Kang, Kyeong-Koo Chi | 2006-10-24 |
| 7060575 | Semiconductor device having transistor and method of manufacturing the same | Beom-jun Jin, Young-Pil Kim | 2006-06-13 |
| 7009257 | Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby | Young-Pil Kim, Beom-jun Jin, Hyoung Joon Kim | 2006-03-07 |
| 6984568 | Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the same | Beom-jun Jin | 2006-01-10 |
| 6953744 | Methods of fabricating integrated circuit devices providing improved short prevention | Hyoung Joon Kim, Young-Wook Park | 2005-10-11 |
| 6885052 | Semiconductor memory device having self-aligned contacts and method of fabricating the same | Tae-hyuk Ahn, Myeong-Cheol Kim, Jung-hyeon Lee, Gyung-jin Min | 2005-04-26 |
| 6689654 | Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad | Young-Pil Kim, Beom-jun Jin, Hyoung Joon Kim | 2004-02-10 |
| 6682975 | Semiconductor memory device having self-aligned contact and fabricating method thereof | Myeong-Cheol Kim, Sang-Sup Jeong, Tae-hyuk Ahn | 2004-01-27 |
| 6680511 | Integrated circuit devices providing improved short prevention | Hyoung Joon Kim, Young-Wook Park | 2004-01-20 |
| 6664585 | Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same | Beom-jun Jin | 2003-12-16 |
| 6576963 | Semiconductor device having transistor | Beom-jun Jin, Young-Pil Kim | 2003-06-10 |
| 6573168 | Methods for forming conductive contact body for integrated circuits using dummy dielectric layer | Ji Soo Kim, Chang-Woong Chu, Dong Hyun Kim, Yong-Chul Oh, Hyoung Joon Kim +2 more | 2003-06-03 |
| 6573551 | Semiconductor memory device having self-aligned contact and fabricating method thereof | Myeong-Cheol Kim, Sang-Sup Jeong, Tae-hyuk Ahn | 2003-06-03 |
| 6498081 | Method of manufacturing self-aligned contact hole | Kyeong-Koo Chi | 2002-12-24 |
| 6429107 | Method for forming conductive contact of semiconductor device | Hyoung Joon Kim, Kyung Won Park | 2002-08-06 |
| 6187686 | Methods for forming patterned platinum layers using masking layers including titanium and related structures | Hwa-Sook Shin | 2001-02-13 |
| 6169009 | Methods of etching platinum group metal film and forming lower electrode of capacitor | Byong-Sun Ju, Hyoun Woo Kim, Chang-Jin Kang, Joo-tae Moon | 2001-01-02 |
| 6054391 | Method for etching a platinum layer in a semiconductor device | Byong-Sun Ju | 2000-04-25 |