JF

Jean-Pierre Faurie

SD Saint-Gobain Cristaux Et Detecteurs: 12 patents #1 of 31Top 4%
LU Lumilog: 4 patents #3 of 9Top 35%
ET Epir Technologies: 1 patents #10 of 15Top 70%
📍 Valbonne, IL: #2 of 3 inventorsTop 70%
Overall (All Time): #204,203 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
11990335 N-CO-doped semiconductor substrate Bernard Beaumont, Vincent Gelly, Nabil Nahas, Florian Tendille 2024-05-21
10497833 Semiconductor material including different crystalline orientation zones and related production process Bernard Beaumont 2019-12-03
10181399 Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride Bernard Beaumont 2019-01-15
10043662 Method of forming semiconductor substrate Bernard Beaumont 2018-08-07
9882087 Semiconductor material including different crystalline orientation zones and related production process Bernard Beaumont 2018-01-30
9318314 Method of forming a freestanding semiconductor wafer Bernard Beaumont 2016-04-19
9312129 Group III-V substrate material with particular crystallographic features and methods of making Bernard Beaumont 2016-04-12
9209018 Semiconductor substrate and method of manufacturing Bernard Beaumont 2015-12-08
9130120 Group III-V substrate material with thin buffer layer and methods of making Bernard Beaumont 2015-09-08
9064685 Semiconductor substrate and method of forming Bernard Beaumont 2015-06-23
9012306 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof Bernard Beaumont 2015-04-21
8921210 Semiconductor substrate and method of forming Bernard Beaumont 2014-12-30
8916456 Group III-V substrate material with particular crystallographic features Bernard Beaumont 2014-12-23
8557042 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate Eric Aujol, Bernard Beaumont 2013-10-15
8283239 Process for growth of low dislocation density GaN Bernard Beaumont, Pierre Gibart 2012-10-09
8030101 Process for producing an epitaxial layer of galium nitride Eric Frayssinet, Bernard Beaumont, Pierre Gibart 2011-10-04
7560296 Process for producing an epitalixal layer of galium nitride Eric Frayssinet, Bernard Beaumont, Pierre Gibart 2009-07-14
7455729 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density Bernard Beaumont, Pierre Gibart 2008-11-25
7445673 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof Bernard Beaumont, Pierre Gibart 2008-11-04
7118929 Process for producing an epitaxial layer of gallium nitride Eric Frayssinet, Bernard Beaumont, Pierre Gibart 2006-10-10
6657194 Multispectral monolithic infrared focal plane array detectors Renganathan Ashokan, Paul Boieriu, Yuanping Chen, Sivalingam Sivananthan 2003-12-02