EA

Eric Aujol

CN CNRS: 1 patents #3,857 of 11,908Top 35%
SD Saint-Gobain Cristaux Et Detecteurs: 1 patents #18 of 31Top 60%
UP Université Blaise Pascal: 1 patents #6 of 16Top 40%
Overall (All Time): #2,079,610 of 4,157,543Top 55%
2
Patents All Time

Issued Patents All Time

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
8557042 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate Jean-Pierre Faurie, Bernard Beaumont 2013-10-15
6632725 Process for producing an epitaxial layer of gallium nitride by the HVPE method Agnès Trassoudaine, Robert Cadoret 2003-10-14