Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11990335 | N-CO-doped semiconductor substrate | Jean-Pierre Faurie, Vincent Gelly, Nabil Nahas, Florian Tendille | 2024-05-21 |
| 10604864 | Method for the production of wafers of nitride of element 13, having a non-zero truncation angle | Vianney Le Roux, Jason Everett Cole | 2020-03-31 |
| 10497833 | Semiconductor material including different crystalline orientation zones and related production process | Jean-Pierre Faurie | 2019-12-03 |
| 10181399 | Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride | Jean-Pierre Faurie | 2019-01-15 |
| 10043662 | Method of forming semiconductor substrate | Jean-Pierre Faurie | 2018-08-07 |
| 9882087 | Semiconductor material including different crystalline orientation zones and related production process | Jean-Pierre Faurie | 2018-01-30 |
| 9318314 | Method of forming a freestanding semiconductor wafer | Jean-Pierre Faurie | 2016-04-19 |
| 9312129 | Group III-V substrate material with particular crystallographic features and methods of making | Jean-Pierre Faurie | 2016-04-12 |
| 9209018 | Semiconductor substrate and method of manufacturing | Jean-Pierre Faurie | 2015-12-08 |
| 9130120 | Group III-V substrate material with thin buffer layer and methods of making | Jean-Pierre Faurie | 2015-09-08 |
| 9064685 | Semiconductor substrate and method of forming | Jean-Pierre Faurie | 2015-06-23 |
| 9012306 | Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof | Jean-Pierre Faurie | 2015-04-21 |
| 8921210 | Semiconductor substrate and method of forming | Jean-Pierre Faurie | 2014-12-30 |
| 8916456 | Group III-V substrate material with particular crystallographic features | Jean-Pierre Faurie | 2014-12-23 |
| 8557042 | Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate | Eric Aujol, Jean-Pierre Faurie | 2013-10-15 |
| 8283239 | Process for growth of low dislocation density GaN | Jean-Pierre Faurie, Pierre Gibart | 2012-10-09 |
| 8030101 | Process for producing an epitaxial layer of galium nitride | Eric Frayssinet, Jean-Pierre Faurie, Pierre Gibart | 2011-10-04 |
| 7560296 | Process for producing an epitalixal layer of galium nitride | Eric Frayssinet, Jean-Pierre Faurie, Pierre Gibart | 2009-07-14 |
| 7488385 | Method for epitaxial growth of a gallium nitride film separated from its substrate | Hacène Lahreche, Gilles Nataf | 2009-02-10 |
| 7455729 | Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density | Pierre Gibart, Jean-Pierre Faurie | 2008-11-25 |
| 7445673 | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof | Jean-Pierre Faurie, Pierre Gibart | 2008-11-04 |
| 7118929 | Process for producing an epitaxial layer of gallium nitride | Eric Frayssinet, Jean-Pierre Faurie, Pierre Gibart | 2006-10-10 |
| 6802902 | Process for producing an epitaxial layer of gallium nitride | Pierre Gibart, Jean-Claude Guillaume, Gilles Nataf, Michel Vaille, Soufien Haffouz | 2004-10-12 |
| 6325850 | Method for producing a gallium nitride epitaxial layer | Pierre Gibart, Jean-Claude Guillaume, Gilles Nataf, Michel Vaille, Soufien Haffouz | 2001-12-04 |