MS

Masashi Sahara

RT Renesas Technology: 16 patents #96 of 3,337Top 3%
HI Hitachi: 14 patents #2,889 of 28,497Top 15%
HC Hitachi Ulsi Systems Co.: 12 patents #29 of 867Top 4%
HS Hitachi Microcomputer System: 4 patents #28 of 257Top 15%
HE Hitachi Vlsi Engineering: 4 patents #189 of 666Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
Overall (All Time): #102,466 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 26–34 of 34 patents

Patent #TitleCo-InventorsDate
6538329 Semiconductor integrated circuit device and method for making the same Masayuki Suzuki, Shinji Nishihara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more 2003-03-25
6503803 Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shinji Nishihara, Shuji Ikeda +5 more 2003-01-07
6476492 Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten Tomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Shinji Nishihara 2002-11-05
6472754 Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector Takashi Nakajima, Tomio Iwasaki, Hiroyuki Ohta, Hideo Miura, Shinji Nishihara +2 more 2002-10-29
6429476 Semiconductor integrated circuit device Masayuki Suzuki, Kentaro Yamada, Takashi Nakajima, Naoki Kanda, Hidenori Suzuki +1 more 2002-08-06
6300237 Semiconductor integrated circuit device and method for making the same Masayuki Suzuki, Shinji Nishihara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more 2001-10-09
6268658 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shinji Nishihara, Shuji Ikeda +5 more 2001-07-31
6031288 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shinji Nishihara, Shuji Ikeda +5 more 2000-02-29
5904556 Method for making semiconductor integrated circuit device having interconnection structure using tungsten film Masayuki Suzuki, Shinji Nishihara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more 1999-05-18