NK

Naoki Kitai

RE Renesas Electronics: 10 patents #332 of 4,529Top 8%
HC Hitachi Ulsi Systems Co.: 9 patents #70 of 867Top 9%
RT Renesas Technology: 8 patents #341 of 3,337Top 15%
PS Ps4 Luxco S.A.R.L.: 1 patents #127 of 276Top 50%
📍 Fussa, JP: #15 of 352 inventorsTop 5%
Overall (All Time): #239,665 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
9530485 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2016-12-27
9111636 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2015-08-18
8847431 Semiconductor device including a pair of shield lines Taihei Shido, Mototsugu Fujimitsu, Nobuhiro Oodaira 2014-09-30
8797791 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2014-08-05
8437179 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2013-05-07
8232589 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2012-07-31
8125017 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2012-02-28
8031511 Semiconductor device Kenichi Osada, Takayuki Kawahara, Kazumasa Yanagisawa 2011-10-04
7964484 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2011-06-21
7907442 Semiconductor integrated circuit Satoru Hanzawa, Akira Kotabe 2011-03-15
7907435 Semiconductor device Kenichi Osada, Takayuki Kawahara, Kazumasa Yanagisawa 2011-03-15
7692943 Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells Kenichi Osada, Takayuki Kawahara, Ken Yamaguchi, Yoshikazu Saito 2010-04-06
7569881 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2009-08-04
7388238 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2008-06-17
7319603 Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells Kenichi Osada, Takayuki Kawahara, Ken Yamaguchi, Yoshikazu Saito 2008-01-15
7087942 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2006-08-08
6998674 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2006-02-14
6977858 Semiconductor device Kenichi Osada, Takayuki Kawahara, Ken Yamaguchi, Yoshikazu Saito 2005-12-20
6885057 Semiconductor integrated circuit device with reduced leakage current Kenichi Osada, Koichiro Ishibashi, Yoshikazu Saitoh, Akio Nishida, Masaru Nakamichi 2005-04-26