Issued Patents All Time
Showing 51–68 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7636253 | Semiconductor device | Tsutomu Okazaki, Kyoya Nitta, Toshihiro Tanaka, Akira Kato, Toshikazu Matsui +3 more | 2009-12-22 |
| 7529126 | Nonvolatile memory device and semiconductor device | Toshihiro Tanaka, Takashi Yamaki, Yutaka Shinagawa, Digh Hisamoto, Kan Yasui +1 more | 2009-05-05 |
| 7502257 | Semiconductor device | Tsutomu Okazaki, Kyoya Nitta, Toshihiro Tanaka, Akira Kato, Toshikazu Matsui +3 more | 2009-03-10 |
| 7443731 | Semiconductor nonvolatile memory device | Digh Hisamoto, Kan Yasui, Tetsuya Ishimaru, Shinichiro Kimura | 2008-10-28 |
| 7259422 | Nonvolatile semiconductor memory device and its fabrication method | Digh Hisamoto, Kan Yasui, Shinichiro Kimura | 2007-08-21 |
| 7245531 | Semiconductor device | Tsutomu Okazaki, Kyoya Nitta, Toshihiro Tanaka, Akira Kato, Toshikazu Matsui +3 more | 2007-07-17 |
| 7212444 | Semiconductor nonvolatile memory device | Digh Hisamoto, Kan Yasui, Tetsuya Ishimaru, Shinichiro Kimura | 2007-05-01 |
| 7095074 | Semiconductor device with reduced memory leakage current | Keisuke Tsukamoto, Yoshihiro Ikeda, Tsutomu Okazaki, Hiroshi Yanagita | 2006-08-22 |
| 7085157 | Nonvolatile memory device and semiconductor device | Toshihiro Tanaka, Takashi Yamaki, Yutaka Shinagawa, Digh Hisamoto, Kan Yasui +1 more | 2006-08-01 |
| 7015090 | Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches | Tsutomu Okazaki, Yoshihiro Ikeda, Keisuke Tsukamoto, Tatsuya Fukumura, Shoji Shukuri +2 more | 2006-03-21 |
| 7001808 | Semiconductor integrated circuit device having a dummy conductive film and method of manufacturing the same | Keisuke Tsukamoto, Yoshihiro Ikeda, Tsutomu Okazaki, Hiroshi Yanagita | 2006-02-21 |
| D513354 | Jack | — | 2005-12-27 |
| 6808951 | Semiconductor integrated circuit device and manufacturing method thereof | Yoshihiro Ikeda, Tsutomu Okazaki, Keisuke Tsukamoto, Hiroshi Yanagita | 2004-10-26 |
| 5200348 | Method of manufacturing semiconductor device with constant width deep groove isolation | Akihisa Uchida, Toshihiko Takakura, Katsumi Ogiue, Yoichi Tamaki, Masao Kawamura | 1993-04-06 |
| 4907063 | Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces | Akihisa Uchida, Toshihiko Takakura, Shinji Nakashima, Nobuhiko Ohno, Katsumi Ogiue | 1990-03-06 |
| 4853343 | Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill | Akihisa Uchida, Toshihiko Takakura, Katsumi Ogiue, Yoichi Tamaki, Masao Kawamura | 1989-08-01 |
| 4746963 | Isolation regions formed by locos followed with groove etch and refill | Akihisa Uchida, Toshihiko Takakura, Katsumi Ogiue, Yoichi Tamaki, Masao Kawamura | 1988-05-24 |
| 4700464 | Method of forming trench isolation in an integrated circuit | Akihisa Uchida, Toshihiko Takakura, Shinji Nakashima, Nobuhiko Ohno, Katsumi Ogiue | 1987-10-20 |