Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5053345 | Method of edge doping SOI islands | Albert W. Fisher | 1991-10-01 |
| H546 | Formation of thin-film resistors on silicon substrates | Chung P. Wu | 1988-11-01 |
| 4766482 | Semiconductor device and method of making the same | Ronald K. Smeltzer, Alvin M. Goodman | 1988-08-23 |
| 4751554 | Silicon-on-sapphire integrated circuit and method of making the same | Kenneth M. Schlesier | 1988-06-14 |
| 4732867 | Method of forming alignment marks in sapphire | — | 1988-03-22 |
| 4733039 | Method of laser soldering | Peter John Zanzucchi | 1988-03-22 |
| 4668973 | Semiconductor device passivated with phosphosilicate glass over silicon nitride | Robert H. Dawson | 1987-05-26 |
| RE32351 | Method of manufacturing a passivating composite comprising a silicon nitride (SI.sub.1 3N.sub.4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer | Robert H. Dawson | 1987-02-17 |
| 4584026 | Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions | Chung P. Wu | 1986-04-22 |
| 4582745 | Dielectric layers in multilayer refractory metallization structure | — | 1986-04-15 |
| 4502206 | Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region | Chung P. Wu | 1985-03-05 |
| 4472210 | Method of making a semiconductor device to improve conductivity of amorphous silicon films | Chung P. Wu, Roger E. Stricker, Bansang W. Lee | 1984-09-18 |
| 4433008 | Doped-oxide diffusion of phosphorus using borophosphosilicate glass | Edward James | 1984-02-21 |
| 4395304 | Selective etching of phosphosilicate glass | Werner Kern | 1983-07-26 |
| 4363830 | Method of forming tapered contact holes for integrated circuit devices | Sheng Teng Hsu | 1982-12-14 |
| 4278508 | Method of detecting a cathodic corrosion site on a metallized substrate | Lawrence K. White, Robert B. Comizzoli | 1981-07-14 |
| 4273805 | Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4) layer and phosphosilicate glass (PSG) layer | Robert H. Dawson | 1981-06-16 |
| 4269654 | Silicon nitride and silicon oxide etchant | Cheryl A. Deckert | 1981-05-26 |
| 4249960 | Laser rounding a sharp semiconductor projection | Chung P. Wu | 1981-02-10 |
| 4237379 | Method for inspecting electrical devices | Cheryl A. Deckert, Robert B. Comizzoli | 1980-12-02 |
| 4196232 | Method of chemically vapor-depositing a low-stress glass layer | Albert W. Fisher | 1980-04-01 |