AG

Alvin M. Goodman

RC Rca: 14 patents #47 of 1,739Top 3%
GE: 3 patents #10,354 of 36,430Top 30%
UF US Air Force: 1 patents #6,190 of 16,312Top 40%
Overall (All Time): #260,805 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
5311055 Trenched bipolar transistor structures Max N. Yoder 1994-05-10
4998156 Structure for a complementary-symmetry COMFET pair Gary M. Dolny 1991-03-05
4837606 Vertical MOSFET with reduced bipolar effects Lawrence A. Goodman 1989-06-06
4766482 Semiconductor device and method of making the same Ronald K. Smeltzer, George L. Schnable 1988-08-23
4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation Lawrence A. Goodman, John P. Russell, Paul H. Robinson 1987-08-04
4598249 Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material Lawrence A. Goodman, Herman F. Gossenberger 1986-07-01
4587713 Method for making vertical MOSFET with reduced bipolar effects Lawrence A. Goodman 1986-05-13
4567431 Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements 1986-01-28
4551643 Power switching circuitry John P. Russell 1985-11-05
4507334 Surface preparation for determining diffusion length by the surface photovoltage method 1985-03-26
4489103 SIPOS Deposition method Herman F. Gossenberger 1984-12-18
4455565 Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode Ramon Ubaldo Martinelli 1984-06-19
4433469 Method of forming a self aligned aluminum polycrystalline silicon line 1984-02-28
4396438 Method of making CCD imagers 1983-08-02
4380773 Self aligned aluminum polycrystalline silicon contact 1983-04-19
4344985 Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer Ming L. Tarng 1982-08-17
4333051 Method and apparatus for determining minority carrier diffusion length in semiconductors 1982-06-01
4199773 Insulated gate field effect silicon-on-sapphire transistor and method of making same Charles E. Weitzel 1980-04-22