Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for producing a contact on an active zone of an integrated circuit, for example produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

Process for producing a contact on an active zone of an integrated circuit, for example produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

US Patent 9922871 · Granted Mar 20, 2018

Estimated economic value: $9,019,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit including bipolar transistors2023
Integrated circuit including bipolar transistors2021
Method and structure to reduce parasitic capacitance in raised source/drain sili2017
Process for producing a contact on an active zone of an integrated circuit, for 2017
Integrated circuit with a self-programmed identification key2014
Improvements for reducing electromigration effect in an integrated circuit2012