Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction

US Patent 9917422 · Granted Mar 13, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming micro-LEDs with ultra-low leakage current2025
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nit2025
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nit2025
Laser beam extraction using distributed bragg reflector (DBR) mirror systems wit2025
Laser beam extraction using distributed bragg reflector (DBR) mirror systems wit2025
Synchronized light source for laser fusion system and method for energy generati2025
Synchronized light source for laser fusion system and method for energy generati2025
Airplane configured with a high intensity pulse laser generation system and meth2025
Airplane configured with a high intensity pulse laser generation system and meth2025
Flexible tube insertion apparatus, control apparatus, and method of changing rig2025
Airplane configured with a high intensity pulse laser generation system and meth2024
Airplane configured with a high intensity pulse laser generation system and meth2024