Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

US Patent 9876076 · Granted Jan 23, 2018

Estimated economic value: $8,495,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for local isolation between transistors produced on an SOI substrate, in 2019
Bioconversion of milk with Bifidobacterium breve for treatment of allergic manif2017
Method for manufacturing insulated-gate MOS transistors2014
Immunomodulatory product obtained from a bifidobacterium culture and composition2012
Method of determining the time for polishing the surface of an integrated circui2003
Process for polishing wafers of integrated circuits2001
Use of a decapeptide with benzodiazepine-type activity for preparing medicines a1998