Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Precursors suitable for high temperature atomic layer deposition of silicon-containing films

Precursors suitable for high temperature atomic layer deposition of silicon-containing films

US Patent 9802828 · Granted Oct 31, 2017

Estimated economic value: $27,276,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of metal oxide infiltration into photoresist2025
Molybdenum (0) precursors for deposition of molybdenum films2025
Dry etching with etch byproduct self-cleaning2025
Metal organonitrile precursors for thin film deposition2025
Electronic device fabrication using area-selective deposition2025
Molybdenum(0) precursors for deposition of molybdenum films2025
Benzyl compound passivation for selective deposition and selective etch protecti2025
Method for forming silicon-phosphorous materials2025
Methods and apparatus for selective etch stop capping and selective via open for2025
Enhanced etch selectivity using halides2025
Corrosion resistant film on a chamber component and methods of depositing thereo2025
Deposition of semiconductor integration films2025