{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same", "item": "https://www.patentleaderboard.com/patent/9691971"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same

Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same

US Patent 9691971 · Granted Jun 27, 2017

Estimated economic value: $11,625,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical memory devices2025
Display device2025
Semiconductor device2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Lens device and display assembly including the same2025
Display device comprising diffraction layer and refraction pattern for controlli2024
Stereoscopic image display device comprising an eye detection sensor that includ2024
Optical device and method of manufacturing the same2024
Integrated circuit devices including a via and methods of forming the same2024
Integrated circuit devices including a via and methods of forming the same2024
Display device and manufacturing method thereof2024
Semiconductor device having a self-forming barrier layer at via bottom2024