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Home › Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies

Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies

US Patent 9633995 · Granted Apr 25, 2017

Estimated economic value: $12,851,000 ⓘ

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