Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas

Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas

US Patent 9601610 · Granted Mar 21, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2020
Vertical III-nitride semiconductor device with a vertically formed two dimension2019
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2019
Vertical super junction III/nitride HEMT with vertically formed two dimensional 2017
Vertical III-nitride semiconductor device with a vertically formed two dimension2016
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2016
Reduction of the inductance of power loop and gate loop in a half-bridge convert2015
Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices2015
Non-uniform lateral profile of two-dimensional electron gas charge density in ty2015
Controlling lateral two-dimensional electron hole gas HEMT in type III nitride d2015
Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices2014
Multiple lateral RESURF LDMOST2012