Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

US Patent 10192986 · Granted Jan 29, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Laterally-gated transistors and lateral Schottky diodes with integrated lateral 2025
Laterally-gated transistors and lateral Schottky diodes with integrated lateral 2024
Ohmic contact for multiple channel FET2023
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2020
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2020
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2020
Dual gate III-switch for high voltage current relay2019
Monolithic integration of group III nitride epitaxial layers2019
FET with buried gate structure2019
Vertical III-nitride semiconductor device with a vertically formed two dimension2019
Vertical III-nitride semiconductor device with a vertically formed two dimension2019
FET with micro-scale device array2019