Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path

Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path

US Patent 9601381 · Granted Mar 21, 2017

Estimated economic value: $11,624,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Liner-less via contact2025
Semiconductor device having hybrid middle of line contacts2025
Planar cell nanoheater design and cell architecture for programmable phase chang2025
Optical filter and corresponding manufacturing method2025
SRAM with staggered stacked FET2025
Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transist2025
Method of making a semiconductor device using a dummy gate2025
Stacked FETS including devices with thick gate oxide2025
Gate-cut and separation techniques for enabling independent gate control of stac2025
Gate-all-around nanosheet field effect transistor integrated with fin field effe2025
Dielectric reflow for boundary control2025
Electronic circuit comprising a RF switches having reduced parasitic capacitance2025