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Home › Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)

Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)

US Patent 9583501 · Granted Feb 28, 2017

Estimated economic value: $32,625,000 ⓘ

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