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Home › Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)

Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)

US Patent 8222111 · Granted Jul 17, 2012

Estimated economic value: $4,847,000 ⓘ

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