{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Gas-phase silicon nitride selective etch", "item": "https://www.patentleaderboard.com/patent/9576815"}]}
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Home › Gas-phase silicon nitride selective etch

Gas-phase silicon nitride selective etch

US Patent 9576815 · Granted Feb 21, 2017

Estimated economic value: $36,475,000 ⓘ

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