Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers

Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers

US Patent 9576798 · Granted Feb 21, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure for digital and radiofrequency applications, and method 2025
Semiconductor structure for digital and radiofrequency applications, and method 2025
Front-side type image sensors2025
Method for fabricating a strained semiconductor-on-insulator substrate2025
Device architectures with tensile and compressive strained substrates2025
Device architectures with tensile and compressive strained substrates2025
Device architectures with tensile and compressive strained substrates2025
Semiconductor on insulator structure for a front side type imager2025
Method for producing a composite structure comprising a thin layer of monocrysta2025
Method for bonding two substrates2024
Front-side-type image sensor2024
Method for manufacturing a substrate for a front-facing image sensor2024