Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component

Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component

US Patent 9559093 · Granted Jan 31, 2017

Estimated economic value: $22,242,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge guard ring with snapback protection2025
Gallium nitride transistor with a doped region2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe ca2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Trench gate trench field plate vertical MOSFET2024
Superlattice photo detector2024
Gallium nitride transistor with a doped region2023
Electrostatic discharge guard ring with snapback protection2023
Laterally diffused metal oxide semiconductor with gate poly contact within sourc2023
Hybrid active-field gap extended drain MOS transistor2022