Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating deep trench isolation structure in image sensor and device thereof

Method of fabricating deep trench isolation structure in image sensor and device thereof

US Patent 9520433 · Granted Dec 13, 2016

Estimated economic value: $5,116,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including germanium region disposed in semiconductor substr2025
Semiconductor device2025
Image sensor having an improved structure for small pixel designs2025
Stacked structure for CMOS image sensors2025
Stacked integrated circuits with redistribution lines2025
3DIC interconnect apparatus and method2025
Control chip and control method thereof2025
Multi-function substrate2025
Multi-wafer integration2025
Semiconductor structure having a silicon active layer formed over a SiGe etch st2025
Trench gate high voltage transistor for embedded memory2025
FUSI gated device formation2025