Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Poly resistor for metal gate integrated circuits

Poly resistor for metal gate integrated circuits

US Patent 9508708 · Granted Nov 29, 2016

Estimated economic value: $10,580,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Diffusion resistor with reduced voltage coefficient of resistance and increased 2018
MOS transistor structure and method of forming the structure with vertically and2018
MOS transistor structure and method of forming the structure with vertically and2017
Low temperature coefficient resistor in CMOS flow2017
Low temperature coefficient resistor in CMOS flow2015
Poly resistor for metal gate integrated circuits2015
High performance asymmetric cascoded transistor2014
Diffusion resistor with reduced voltage coefficient of resistance and increased 2014
Method of building compensated isolated P-well devices2013
Compensated isolated p-well DENMOS devices2013
Low cost transistors using gate orientation and optimized implants2013
Lateral bipolar transistor with compensated well regions2012