Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › P-doping of group-III-nitride buffer layer structure on a heterosubstrate

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

US Patent 9496349 · Granted Nov 15, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low resistance current spreading to n-contacts of micro-LED array2025
Reduction of surface recombination losses in micro-LEDs2024
Bonding methods for light emitting diodes2023
Cascaded pupil-replicating waveguides2023
Regrowth of epitaxial layer for surface recombination velocity reduction in ligh2023
Bonding methods for light emitting diodes2023
Reduction of surface recombination losses in micro-LEDs2023
Hybrid-bonded and run-out compensated light emitting diodes2023
Bonding methods for light emitting diodes2022
Bonding methods for light emitting diodes2022
Micron-sized light emitting diode designs2022
Micro-LED design for chief ray walk-off compensation2022