Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

US Patent 11677042 · Granted Jun 13, 2023

Estimated economic value: $261,054,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Model training using build artifacts2025
Low resistance current spreading to n-contacts of micro-LED array2025
Low resistance current spreading to n-contacts of micro-LED array2025
Cartridge for inspection2025
High refractive index birefringent organic solid crystal and methods of making t2024
Bonding interface for hybrid TFT-based micro display projector2024
Reduction of surface recombination losses in micro-LEDs2024
Reduction of surface recombination losses in micro-LEDs2024
Apparatus, system, and method for stepping up high voltages within small form fa2024
Light emission display element and device with polarized and angularly-controlle2024
In situ selective etching and selective regrowth of epitaxial layer for surface 2024
Bonding methods for light emitting diodes2023